Compensating vacancy defects in Sn- and Mg-doped In 2O3

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorKorhonen, E.
dc.contributor.authorTuomisto, Filip
dc.contributor.authorBierwagen, O.
dc.contributor.authorSpeck, J. S.
dc.contributor.authorGalazka, Z.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-08-26T09:01:42Z
dc.date.available2015-08-26T09:01:42Z
dc.date.issued2014
dc.description.abstractMBE-grown Sn- and Mg-doped epitaxial In2O3 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy and compared to a bulk crystal reference. Samples were subjected to oxygen or vacuum annealing and the effect on vacancy type defects was studied. Results indicate that after oxygen annealing the samples are dominated by cation vacancies, the concentration of which changes with the amount of doping. In highly Sn-doped In2O3, however, these vacancies are not the main compensating acceptor. Vacuum annealing increases the size of vacancies in all samples, possibly by clustering them with oxygen vacancies.en
dc.description.versionPeer revieweden
dc.format.extent245307/1-7
dc.format.mimetypeapplication/pdfen
dc.identifier.citationKorhonen, E. & Tuomisto, Filip & Bierwagen, O. & Speck, J. S. & Galazka, Z. 2014. Compensating vacancy defects in Sn- and Mg-doped In 2O3. Physical Review B. Volume 90, Issue 24. 245307/1-7. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.90.245307en
dc.identifier.doi10.1103/physrevb.90.245307
dc.identifier.issn1098-0121 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17502
dc.identifier.urnURN:NBN:fi:aalto-201508264117
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.ispartofseriesPhysical Review Ben
dc.relation.ispartofseriesVolume 90, Issue 24
dc.rights© 2014 American Physical Society (APS). This is the accepted version of the following article: Korhonen, E. & Tuomisto, Filip & Bierwagen, O. & Speck, J. S. & Galazka, Z. 2014. Compensating vacancy defects in Sn- and Mg-doped In 2O3. Physical Review B. Volume 90, Issue 24. 245307/1-7. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.90.245307, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.90.245307.en
dc.rights.holderAmerican Physical Society (APS)
dc.subject.keywordIn2O3en
dc.subject.keywordvacanciesen
dc.subject.keywordpositronsen
dc.subject.otherPhysicsen
dc.titleCompensating vacancy defects in Sn- and Mg-doped In 2O3en
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

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