Compensating vacancy defects in Sn- and Mg-doped In 2O3
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© 2014 American Physical Society (APS). This is the accepted version of the following article: Korhonen, E. & Tuomisto, Filip & Bierwagen, O. & Speck, J. S. & Galazka, Z. 2014. Compensating vacancy defects in Sn- and Mg-doped In 2O3. Physical Review B. Volume 90, Issue 24. 245307/1-7. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.90.245307, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.90.245307.
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Authors
Korhonen, E.
Tuomisto, Filip
Bierwagen, O.
Speck, J. S.
Galazka, Z.
Date
2014
Major/Subject
Mcode
Degree programme
Language
en
Pages
245307/1-7
Series
Physical Review B, Volume 90, Issue 24
Abstract
MBE-grown Sn- and Mg-doped epitaxial In2O3 thin-film samples with varying doping concentrations have been measured using positron Doppler spectroscopy and compared to a bulk crystal reference. Samples were subjected to oxygen or vacuum annealing and the effect on vacancy type defects was studied. Results indicate that after oxygen annealing the samples are dominated by cation vacancies, the concentration of which changes with the amount of doping. In highly Sn-doped In2O3, however, these vacancies are not the main compensating acceptor. Vacuum annealing increases the size of vacancies in all samples, possibly by clustering them with oxygen vacancies.Description
Keywords
In2O3, vacancies, positrons
Other note
Citation
Korhonen, E. & Tuomisto, Filip & Bierwagen, O. & Speck, J. S. & Galazka, Z. 2014. Compensating vacancy defects in Sn- and Mg-doped In 2O3. Physical Review B. Volume 90, Issue 24. 245307/1-7. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.90.245307