Electrostatic control of quasiparticle poisoning in a hybrid semiconductor-superconductor island

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Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2023-07-15
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Language
en
Pages
6
1-6
Series
Physical Review B, Volume 108, issue 4
Abstract
The performance of superconducting devices is often degraded by the uncontrolled appearance and disappearance of quasiparticles, a process known as poisoning. We demonstrate the electrostatic control of quasiparticle poisoning in the form of single-charge tunneling across a fixed barrier onto a Coulomb island in an InAs/Al hybrid nanowire. High-bandwidth charge sensing was used to monitor the charge occupancy of the island across Coulomb blockade peaks, where tunneling rates were maximal, and Coulomb valleys, where tunneling was absent. Electrostatic gates changed the on-peak tunneling rates by two orders of magnitude for a barrier with fixed normal-state resistance, which we attribute to the gate dependence of the size and softness of the induced superconducting gap on the island, corroborated by separate density-of-states measurements. Temperature and magnetic field dependence of tunneling rates are also investigated.
Description
Funding Information: We thank Roman Lutchyn, Dmitry Pikulin, Judith Suter, and Jukka Vayrynen for valuable discussions, and Shiv Upadhyay for help with fabrication. Research is supported by Microsoft, the Danish National Research Foundation, and the European Research Commission, Grant No. 716655, and a grant (Project No. 43951) from VILLUM FONDEN. Publisher Copyright: ©2023 American Physical Society.
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Nguyen , H Q , Sabonis , D , Razmadze , D , Mannila , E T , Maisi , V F , van Zanten , D M T , O'Farrell , E C T , Krogstrup , P , Kuemmeth , F , Pekola , J P & Marcus , C M 2023 , ' Electrostatic control of quasiparticle poisoning in a hybrid semiconductor-superconductor island ' , Physical Review B , vol. 108 , no. 4 , L041302 , pp. 1-6 . https://doi.org/10.1103/PhysRevB.108.L041302