Laterally proximized aluminum tunnel junctions
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© 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://scitation.aip.org/content/aip/journal/apl/98/20/10.1063/1.3590922
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2011
Major/Subject
Mcode
Degree programme
Language
en
Pages
203501/1-3
Series
Applied Physics Letters, Volume 98, Issue 20
Abstract
This letter presents experiments on junctions fabricated by a technique that enables the use of high-quality aluminum oxide tunnel barriers with normal metal electrodes at low temperatures. Inverse proximity effect is applied to diminish the superconductivity of an aluminum dot through a clean lateral connection to a normal metal electrode. To demonstrate the effectiveness of this method, fully normal-state single electron transistors (SETs) and normal metal-insulator-superconductor (NIS) junctions applying proximized Aljunctions were fabricated. The transport characteristics of the junctions were similar to those obtained from standard theoreticalmodels of regular SETs and NIS junctions.Description
Keywords
tunnel junctions, aluminium, Josephson junctions, superconducting metals, superconducting junctions, superconductivity
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Citation
Koski, J. V. & Peltonen, J. T. & Meschke, M. & Pekola, Jukka. 2011. Laterally proximized aluminum tunnel junctions. Applied Physics Letters. Volume 98, Issue 20. P. 203501/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.3590922.