Laterally proximized aluminum tunnel junctions

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Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2011
Major/Subject
Mcode
Degree programme
Language
en
Pages
203501/1-3
Series
Applied Physics Letters, Volume 98, Issue 20
Abstract
This letter presents experiments on junctions fabricated by a technique that enables the use of high-quality aluminum oxide tunnel barriers with normal metal electrodes at low temperatures. Inverse proximity effect is applied to diminish the superconductivity of an aluminum dot through a clean lateral connection to a normal metal electrode. To demonstrate the effectiveness of this method, fully normal-state single electron transistors (SETs) and normal metal-insulator-superconductor (NIS) junctions applying proximized Aljunctions were fabricated. The transport characteristics of the junctions were similar to those obtained from standard theoreticalmodels of regular SETs and NIS junctions.
Description
Keywords
tunnel junctions, aluminium, Josephson junctions, superconducting metals, superconducting junctions, superconductivity
Other note
Citation
Koski, J. V. & Peltonen, J. T. & Meschke, M. & Pekola, Jukka. 2011. Laterally proximized aluminum tunnel junctions. Applied Physics Letters. Volume 98, Issue 20. P. 203501/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.3590922.