Laterally proximized aluminum tunnel junctions

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© 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://scitation.aip.org/content/aip/journal/apl/98/20/10.1063/1.3590922

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Journal Title

Journal ISSN

Volume Title

School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2011

Major/Subject

Mcode

Degree programme

Language

en

Pages

203501/1-3

Series

Applied Physics Letters, Volume 98, Issue 20

Abstract

This letter presents experiments on junctions fabricated by a technique that enables the use of high-quality aluminum oxide tunnel barriers with normal metal electrodes at low temperatures. Inverse proximity effect is applied to diminish the superconductivity of an aluminum dot through a clean lateral connection to a normal metal electrode. To demonstrate the effectiveness of this method, fully normal-state single electron transistors (SETs) and normal metal-insulator-superconductor (NIS) junctions applying proximized Aljunctions were fabricated. The transport characteristics of the junctions were similar to those obtained from standard theoreticalmodels of regular SETs and NIS junctions.

Description

Keywords

tunnel junctions, aluminium, Josephson junctions, superconducting metals, superconducting junctions, superconductivity

Other note

Citation

Koski, J. V. & Peltonen, J. T. & Meschke, M. & Pekola, Jukka. 2011. Laterally proximized aluminum tunnel junctions. Applied Physics Letters. Volume 98, Issue 20. P. 203501/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.3590922.