Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions
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© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 108, Issue 4 and may be found at http://scitation.aip.org/content/aip/journal/jap/108/4/10.1063/1.3462394.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2010
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Language
en
Pages
046101/1-3
Series
Journal of Applied Physics, Volume 108, Issue 4
Abstract
The nature of intrinsic defects in ZnO films grown by metal organic vapor phase epitaxy was studied by positron annihilation and photoluminescence spectroscopy techniques. The supply of Zn and O during the film synthesis was varied by applying different growth temperatures (325–485 °C), affecting decomposition of the metal organic precursors. The microscopic identification of vacancy complexes was derived from a systematic variation in the defect balance in accordance with Zn/O supply trends.Description
Keywords
ZnO, positrons, vacancies
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Citation
Venkatachalapathy, Vishnukanthan & Galeckas, Augustinas & Zubiaga, Asier & Tuomisto, Filip & Kuznetsov, Andrej Yu. 2010. Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions. Journal of Applied Physics. Volume 108, Issue 4. 046101/1-3. ISSN 0021-8979 (printed). DOI: 10.1063/1.3462394