High-k fluoropolymers dielectrics for low-bias ambipolar organic light emitting transistors (Olets)

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2021-12-01
Major/Subject
Mcode
Degree programme
Language
en
Pages
Series
Materials, Volume 14, issue 24
Abstract
Organic light emitting transistors (OLETs) combine, in the same device, the function of an electrical switch with the capability of generating light under appropriate bias conditions. In this work, we demonstrate how engineering the dielectric layer based on high-k polyvinylidene fluoride (PVDF)-based polymers can lead to a drastic reduction of device driving voltages and the improvement of its optoelectronic properties. We first investigated the morphology and the dielectric response of these polymer dielectrics in terms of polymer (P(VDF-TrFE) and P(VDF-TrFE-CFE)) and solvent content (cyclopentanone, methylethylketone). Implementing these high-k PVDF-based dielectrics enabled low-bias ambipolar organic light emitting transistors, with reduced threshold voltages (<20 V) and enhanced light output (compared to conventional polymer reference), along with an overall improvement of the device efficiency. Further, we preliminary transferred these fluorinated high-k dielectric films onto a plastic substrate to enable flexible light emitting transistors. These findings hold potential for broader exploitation of the OLET platform, where the device can now be driven by commercially available electronics, thus enabling flexible low-bias organic electronic devices.
Description
Funding Information: Author Contributions: Conceptualization, A.A. and C.S.; methodology, A.A. and C.S.; validation, A.A., K.G.-R., and C.S.; data curation, A.A., K.G.-R., and C.S.; writing—original draft preparation, A.A. and C.S.; writing—review and editing, A.A., K.G.-R., and C.S.; supervision, C.S.; project administration, C.S.; funding acquisition, C.S. All authors have read and agreed to the published ver-sion ofFunding:the manuThescript.authors acknowledge the support from the Academy of Finland Flagship Program (Grant No.: 320167, PREIN) and the Aalto seed funding scheme. Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
Keywords
Ferroelectric polymer(s), Fluoropolymer(s), High-k, Low-bias, OLET(s), Organic light emitting device(s), Organic light emitting transistor(s), Polymer gate dielectrics
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Citation
Albeltagi , A , Gallegos-Rosas , K & Soldano , C 2021 , ' High-k fluoropolymers dielectrics for low-bias ambipolar organic light emitting transistors (Olets) ' , Materials , vol. 14 , no. 24 , 7635 . https://doi.org/10.3390/ma14247635