N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2018-10
Major/Subject
Mcode
Degree programme
Language
en
Pages
4
Series
APPLIED PHYSICS EXPRESS, Volume 11, issue 10
Abstract
We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing a high buffer leakage current. The silicon concentration decreases from 2 x 10(18) to 9 x 10(15) cm(-3) with decreasing growth temperature, reducing the buffer leakage current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6 x 10(4) owing to the low leakage of AlN buffer layers. (C) 2018 The Japan Society of Applied Physics
Description
Keywords
ELECTRON-MOBILITY TRANSISTORS, MOVPE GROWTH, GAN, FACE, DEPOSITION, CARBON
Other note
Citation
Lemettinen, J, Okumura, H, Palacios, T & Suihkonen, S 2018, ' N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications ', Applied Physics Express, vol. 11, no. 10, 101002 . https://doi.org/10.7567/APEX.11.101002