Non linear behaviour of three terminal graphene devices

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.advisorKim, Wonjae 
dc.contributor.authorBanerjee, Kaustuv 
dc.contributor.departmentMikro- ja nanotekniikan laitosfi
dc.contributor.supervisorLipsanen, Harri 
dc.date.accessioned2012-07-02T08:18:56Z
dc.date.available2012-07-02T08:18:56Z
dc.date.issued2011 
dc.description.abstractGraphene, a 2D allotrope of carbon, has, since its synthesis in 2004, taken the world of physicists by storm. By virtue of its unique energy spectrum grapheme exhibit many unique electronic properties - ultra high mobility of charge carriers and ambipolar effect are two of the most important ones. Three terminal ballistic junctions (TBJ), a new class of device, which has in past showed a host of novel non-linear electrical properties when fabricated out of semiconductor hetero structure, can be used to form active devices out of graphene that contravene the latter's gapless nature. In this thesis three terminal junctions were fabricated on both mono- and bilayer graphene. When operated in a push-pull configuration at room temperature both of them displayed near parabolic voltage and current output. Due to the ambipolar effect of graphene the nature of the output curves could be tuned with a back gate voltage. It was observed that the output curves tend to bend upward for operation in the electron transport regime and downward in the hole transport regime. Moreover, the output curves became progressively more non-linear as the back gate voltage drove the system deeper into either of these regimes. Both of these observations were in direct opposition to the data published in earlier literatures. The voltage rectification of the devices was found out to be about 5%. With clearer theoretical understanding of the mechanism and better fabrication strategies it is hoped that three terminal graphene junctions can be used to make rectifiers, frequency multipliers and logic gates capable of performing at high speed and low power.en
dc.format.extent[9] + 65 
dc.format.mimetypeapplication/pdf 
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/3699
dc.identifier.urnURN:NBN:fi:aalto-201207022665
dc.language.isoenen
dc.locationP1fi
dc.programme.majorOptoelektroniikkafi
dc.programme.mcodeS-104 
dc.publisherAalto Universityen
dc.publisherAalto-yliopistofi
dc.rights.accesslevelopenAccess
dc.subject.keywordGrapheneen
dc.subject.keywordballistic transporten
dc.subject.keywordthree-terminal junctionsen
dc.subject.keywordnon-linear electrical propertyen
dc.subject.keywordnano-electronicsen
dc.titleNon linear behaviour of three terminal graphene devicesen
dc.typeG2 Pro gradu, diplomityöfi
dc.type.dcmitypetexten
dc.type.okmG2 Pro gradu, diplomityö
dc.type.ontasotDiplomityöfi
dc.type.ontasotMaster's thesisen
dc.type.publicationmasterThesis
local.aalto.digifolderAalto_05240
local.aalto.idinssi42706
local.aalto.openaccessyes
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