Single-charge escape processes through a hybrid turnstile in a dissipative environment

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2011-01-26
Major/Subject
Mcode
Degree programme
Language
en
Pages
14
1-14
Series
NEW JOURNAL OF PHYSICS, Volume 13
Abstract
We have investigated the static, charge-trapping properties of a hybrid superconductor–normal metal electron turnstile embedded in a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducting trapping island on the other side. The electron hold times, τ~2–20 s, in our two-junction circuit are comparable with those of typical multi-junction, N≥4, normal-metal single-electron tunneling devices. A semi-phenomenological model of the environmental activation of tunneling is applied for the analysis of the switching statistics. The experimental results are promising for electrical metrology applications.
Description
Keywords
circuits, Coulomb-clockade, device, electron pump, fluctuations, on-chip resistors, trap, tunnel-junctions
Other note
Citation
Lotkhov , S V , Saira , O P , Pekola , J P & Zorin , A B 2011 , ' Single-charge escape processes through a hybrid turnstile in a dissipative environment ' , New Journal of Physics , vol. 13 , 013040 , pp. 1-14 . https://doi.org/10.1088/1367-2630/13/1/013040