Microwave quantum diode

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorUpadhyay, Rishabhen_US
dc.contributor.authorGolubev, Dmitry S.en_US
dc.contributor.authorChang, Yu Chengen_US
dc.contributor.authorThomas, Georgeen_US
dc.contributor.authorGuthrie, Andrewen_US
dc.contributor.authorPeltonen, Joonas T.en_US
dc.contributor.authorPekola, Jukka P.en_US
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.groupauthorQuantum Phenomena and Devicesen
dc.contributor.groupauthorCentre of Excellence in Quantum Technology, QTFen
dc.date.accessioned2024-02-07T08:19:51Z
dc.date.available2024-02-07T08:19:51Z
dc.date.issued2024-01-20en_US
dc.descriptionFunding Information: We acknowledge the financial support from Academy of Finland grants (grant number 297240, 312057 and 303677), and from the European Union’s Horizon 2020 research and innovation programme under the European Research Council (ERC) programme (grant number 742559) and Marie Sklodowska-Curie actions (grant agreements 766025). We sincerely recognize the provision of facilities by Micronova Nanofabrication Centre, and OtaNano - Low Temperature Laboratory of Aalto University which is a part of European Microkelvin Platform EMP (grant number. 824109), to perform this research. We thank and acknowledge VTT Technical Research Center for provision of high quality sputtered Nb films. | openaire: EC/H2020/742559/EU//SQH | openaire: EC/H2020/766025/EU//QuESTech
dc.description.abstractThe fragile nature of quantum circuits is a major bottleneck to scalable quantum applications. Operating at cryogenic temperatures, quantum circuits are highly vulnerable to amplifier backaction and external noise. Non-reciprocal microwave devices such as circulators and isolators are used for this purpose. These devices have a considerable footprint in cryostats, limiting the scalability of quantum circuits. As a proof-of-concept, here we report a compact microwave diode architecture, which exploits the non-linearity of a superconducting flux qubit. At the qubit degeneracy point we experimentally demonstrate a significant difference between the power levels transmitted in opposite directions. The observations align with the proposed theoretical model. At − 99 dBm input power, and near the qubit-resonator avoided crossing region, we report the transmission rectification ratio exceeding 90% for a 50 MHz wide frequency range from 6.81 GHz to 6.86 GHz, and over 60% for the 250 MHz range from 6.67 GHz to 6.91 GHz. The presented architecture is compact, and easily scalable towards multiple readout channels, potentially opening up diverse opportunities in quantum information, microwave read-out and optomechanics.en
dc.description.versionPeer revieweden
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationUpadhyay, R, Golubev, D S, Chang, Y C, Thomas, G, Guthrie, A, Peltonen, J T & Pekola, J P 2024, 'Microwave quantum diode', Nature Communications, vol. 15, no. 1, 630. https://doi.org/10.1038/s41467-024-44908-wen
dc.identifier.doi10.1038/s41467-024-44908-wen_US
dc.identifier.issn2041-1723
dc.identifier.otherPURE UUID: 9b19e073-818b-4c44-8f1d-02c5930ee3ffen_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/9b19e073-818b-4c44-8f1d-02c5930ee3ffen_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/135664318/Microwave_quantum_diode.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/126702
dc.identifier.urnURN:NBN:fi:aalto-202402072361
dc.language.isoenen
dc.publisherNature Publishing Group
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/766025/EU//QuESTechen_US
dc.relation.fundinginfoWe acknowledge the financial support from Academy of Finland grants (grant number 297240, 312057 and 303677), and from the European Union’s Horizon 2020 research and innovation programme under the European Research Council (ERC) programme (grant number 742559) and Marie Sklodowska-Curie actions (grant agreements 766025). We sincerely recognize the provision of facilities by Micronova Nanofabrication Centre, and OtaNano - Low Temperature Laboratory of Aalto University which is a part of European Microkelvin Platform EMP (grant number. 824109), to perform this research. We thank and acknowledge VTT Technical Research Center for provision of high quality sputtered Nb films. We acknowledge the financial support from Academy of Finland grants (grant number 297240, 312057 and 303677), and from the European Union’s Horizon 2020 research and innovation programme under the European Research Council (ERC) programme (grant number 742559) and Marie Sklodowska-Curie actions (grant agreements 766025). We sincerely recognize the provision of facilities by Micronova Nanofabrication Centre, and OtaNano - Low Temperature Laboratory of Aalto University which is a part of European Microkelvin Platform EMP (grant number. 824109), to perform this research. We thank and acknowledge VTT Technical Research Center for provision of high quality sputtered Nb films.
dc.relation.ispartofseriesNature Communicationsen
dc.relation.ispartofseriesVolume 15, issue 1en
dc.rightsopenAccessen
dc.titleMicrowave quantum diodeen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

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