Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorLiu, Hanchenen_US
dc.contributor.authorPasanen, Tonien_US
dc.contributor.authorLeiviskä, Oskarien_US
dc.contributor.authorIsometsä, Joonasen_US
dc.contributor.authorFung, Johnen_US
dc.contributor.authorYli-Koski, Markoen_US
dc.contributor.authorMiettinen, Mikkoen_US
dc.contributor.authorLaukkanen, Pekkaen_US
dc.contributor.authorVähänissi, Villeen_US
dc.contributor.authorSavin, Heleen_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.groupauthorHele Savin Groupen
dc.contributor.organizationUniversity of Turkuen_US
dc.date.accessioned2023-06-05T04:40:50Z
dc.date.available2023-06-05T04:40:50Z
dc.date.issued2023-05-09en_US
dc.description.abstractThe excellent field-effect passivation provided by aluminum oxide (Al2O3) on germanium surfaces relies on the high negative fixed charge present in the film. However, in many applications, a neutral or a positive charge would be preferred. Here, we investigate the surface passivation performance and the charge polarity of plasma-enhanced atomic layer deposited (PEALD) silicon oxide (SiO2) on Ge. The results show that even a 3 nm thick PEALD SiO2 provides a positive charge density (Qtot, ∼2.6 × 1011 cm−2) and a relatively good surface passivation (maximum surface recombination velocity SRVmax ∼16 cm/s). When the SiO2 thin film is capped with an ALD Al2O3 layer, the surface passivation improves further and a low midgap interface defect density (Dit) of ∼1 × 1011 eV−1 cm−2 is achieved. By varying the SiO2 thickness under the Al2O3 capping, it is possible to control the Qtot from virtually neutral (∼2.8 × 1010 cm−2) to moderately positive (∼8.5 × 1011 cm−2) values. Consequently, an excellent SRVmax as low as 1.3 cm/s is obtained using optimized SiO2/Al2O3 layer thicknesses. Finally, the origin of the positive charge as well as the interface defects related to PEALD SiO2 are discussed. © 2023 Author(s).en
dc.description.versionPeer revieweden
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationLiu, H, Pasanen, T, Leiviskä, O, Isometsä, J, Fung, J, Yli-Koski, M, Miettinen, M, Laukkanen, P, Vähänissi, V & Savin, H 2023, ' Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium ', Applied Physics Letters, vol. 122, no. 19, 191602 . https://doi.org/10.1063/5.0152652en
dc.identifier.doi10.1063/5.0152652en_US
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.otherPURE UUID: 102212be-88a3-4fb3-9dfe-65d69aae5b74en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/102212be-88a3-4fb3-9dfe-65d69aae5b74en_US
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dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/107992644/Liu_plasma_enhanced_atomic_layer.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/121206
dc.identifier.urnURN:NBN:fi:aalto-202306053588
dc.language.isoenen
dc.publisherAmerican Institute of Physics
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseriesVolume 122, issue 19en
dc.rightsopenAccessen
dc.titlePlasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germaniumen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
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