Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.author | Liu, Hanchen | en_US |
dc.contributor.author | Pasanen, Toni | en_US |
dc.contributor.author | Leiviskä, Oskari | en_US |
dc.contributor.author | Isometsä, Joonas | en_US |
dc.contributor.author | Fung, John | en_US |
dc.contributor.author | Yli-Koski, Marko | en_US |
dc.contributor.author | Miettinen, Mikko | en_US |
dc.contributor.author | Laukkanen, Pekka | en_US |
dc.contributor.author | Vähänissi, Ville | en_US |
dc.contributor.author | Savin, Hele | en_US |
dc.contributor.department | Department of Electronics and Nanoengineering | en |
dc.contributor.groupauthor | Hele Savin Group | en |
dc.contributor.organization | University of Turku | en_US |
dc.date.accessioned | 2023-06-05T04:40:50Z | |
dc.date.available | 2023-06-05T04:40:50Z | |
dc.date.issued | 2023-05-09 | en_US |
dc.description.abstract | The excellent field-effect passivation provided by aluminum oxide (Al2O3) on germanium surfaces relies on the high negative fixed charge present in the film. However, in many applications, a neutral or a positive charge would be preferred. Here, we investigate the surface passivation performance and the charge polarity of plasma-enhanced atomic layer deposited (PEALD) silicon oxide (SiO2) on Ge. The results show that even a 3 nm thick PEALD SiO2 provides a positive charge density (Qtot, ∼2.6 × 1011 cm−2) and a relatively good surface passivation (maximum surface recombination velocity SRVmax ∼16 cm/s). When the SiO2 thin film is capped with an ALD Al2O3 layer, the surface passivation improves further and a low midgap interface defect density (Dit) of ∼1 × 1011 eV−1 cm−2 is achieved. By varying the SiO2 thickness under the Al2O3 capping, it is possible to control the Qtot from virtually neutral (∼2.8 × 1010 cm−2) to moderately positive (∼8.5 × 1011 cm−2) values. Consequently, an excellent SRVmax as low as 1.3 cm/s is obtained using optimized SiO2/Al2O3 layer thicknesses. Finally, the origin of the positive charge as well as the interface defects related to PEALD SiO2 are discussed. © 2023 Author(s). | en |
dc.description.version | Peer reviewed | en |
dc.format.mimetype | application/pdf | en_US |
dc.identifier.citation | Liu, H, Pasanen, T, Leiviskä, O, Isometsä, J, Fung, J, Yli-Koski, M, Miettinen, M, Laukkanen, P, Vähänissi, V & Savin, H 2023, ' Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium ', Applied Physics Letters, vol. 122, no. 19, 191602 . https://doi.org/10.1063/5.0152652 | en |
dc.identifier.doi | 10.1063/5.0152652 | en_US |
dc.identifier.issn | 0003-6951 | |
dc.identifier.issn | 1077-3118 | |
dc.identifier.other | PURE UUID: 102212be-88a3-4fb3-9dfe-65d69aae5b74 | en_US |
dc.identifier.other | PURE ITEMURL: https://research.aalto.fi/en/publications/102212be-88a3-4fb3-9dfe-65d69aae5b74 | en_US |
dc.identifier.other | PURE LINK: http://www.scopus.com/inward/record.url?scp=85158909995&partnerID=8YFLogxK | en_US |
dc.identifier.other | PURE FILEURL: https://research.aalto.fi/files/107992644/Liu_plasma_enhanced_atomic_layer.pdf | en_US |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/121206 | |
dc.identifier.urn | URN:NBN:fi:aalto-202306053588 | |
dc.language.iso | en | en |
dc.publisher | American Institute of Physics | |
dc.relation.ispartofseries | Applied Physics Letters | en |
dc.relation.ispartofseries | Volume 122, issue 19 | en |
dc.rights | openAccess | en |
dc.title | Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium | en |
dc.type | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä | fi |
dc.type.version | acceptedVersion |