Area-Selective Atomic Layer Deposition on Functionalized Graphene Prepared by Reversible Laser Oxidation

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorMentel, Kamila K.en_US
dc.contributor.authorEmelianov, Aleksei V.en_US
dc.contributor.authorPhilip, Anishen_US
dc.contributor.authorJohansson, Andreasen_US
dc.contributor.authorKarppinen, Maariten_US
dc.contributor.authorPettersson, Mikaen_US
dc.contributor.departmentDepartment of Chemistry and Materials Scienceen
dc.contributor.groupauthorInorganic Materials Chemistryen
dc.contributor.organizationUniversity of Jyväskyläen_US
dc.date.accessioned2022-11-09T08:03:25Z
dc.date.available2022-11-09T08:03:25Z
dc.date.issued2022-10-13en_US
dc.descriptionPublisher Copyright: © 2022 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH.
dc.description.abstractArea-selective atomic layer deposition (ALD) is a promising “bottom-up” alternative to current nanopatterning techniques. While it has been successfully implemented in traditional microelectronic processes, selective nucleation of ALD on 2D materials has so far remained an unsolved challenge. In this article, a precise control of the selective deposition of ZnO on graphene at low temperatures (<250 °C) is demonstrated. Maskless femtosecond laser writing is used to locally activate predefined surface areas (down to 300 nm) by functionalizing graphene to achieve excellent ALD selectivity (up to 100%) in these regions for 6-nm-thick ZnO films. The intrinsic conductive properties of graphene can be restored by thermal annealing at low temperature (300 °C) without destroying the deposited ZnO patterns. As the graphene layer can be transferred onto other material surfaces, the present patterning technique opens new attractive ways for various applications in which the functionalized graphene is utilized as a template layer for selective deposition of desired materials.en
dc.description.versionPeer revieweden
dc.format.extent9
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationMentel, K K, Emelianov, A V, Philip, A, Johansson, A, Karppinen, M & Pettersson, M 2022, ' Area-Selective Atomic Layer Deposition on Functionalized Graphene Prepared by Reversible Laser Oxidation ', Advanced Materials Interfaces, vol. 9, no. 29, 2201110 . https://doi.org/10.1002/admi.202201110en
dc.identifier.doi10.1002/admi.202201110en_US
dc.identifier.issn2196-7350
dc.identifier.otherPURE UUID: b8ed5d84-0516-4995-9491-74fd58d2ce6cen_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/b8ed5d84-0516-4995-9491-74fd58d2ce6cen_US
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85137363430&partnerID=8YFLogxKen_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/90663914/Area_Selective_Atomic_Layer_Deposition_on_Functionalized_Graphene_Prepared_by_Reversible_Laser_Oxidation.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/117692
dc.identifier.urnURN:NBN:fi:aalto-202211096463
dc.language.isoenen
dc.publisherWILEY-BLACKWELL
dc.relation.ispartofseriesAdvanced Materials Interfacesen
dc.relation.ispartofseriesVolume 9, issue 29en
dc.rightsopenAccessen
dc.subject.keywordatomic layer depositionen_US
dc.subject.keywordgrapheneen_US
dc.subject.keywordsurface engineeringen_US
dc.subject.keywordtwo-photon oxidationen_US
dc.titleArea-Selective Atomic Layer Deposition on Functionalized Graphene Prepared by Reversible Laser Oxidationen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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