Optically excited THz generation from ordered arrays of GaAs nanowires

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Journal Title
Journal ISSN
Volume Title
Conference article in proceedings
Date
2017
Major/Subject
Mcode
Degree programme
Language
en
Pages
5
100-104
Series
3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia, Volume 201, Procedia Engineering
Abstract
THz generation under excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz generation is determined by the geometrical parameters of nanostructures and has a resonant character. Furthermore, it is shown that the terahertz generation efficiency at optimum geometrical parameters of an array of semiconductor nanowires is greater than the corresponding value for bulk semiconductor p-InAs which is the most effective THz emitter.
Description
Keywords
GaAs, III-V semiconductors, leaky mods, light absorption, MOVPE, nanowires, NWs, Terahertz generation, THz
Other note
Citation
Trukhin , V N , Bouravleuv , A D , Mustafin , I A , Kakko , J P & Lipsanen , H 2017 , Optically excited THz generation from ordered arrays of GaAs nanowires . in 3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia . vol. 201 , Procedia Engineering , Elsevier , pp. 100-104 , International Conference on Information Technology and Nanotechnology , Samara , Russian Federation , 25/04/2017 . https://doi.org/10.1016/j.proeng.2017.09.674