Approaching Truly Freestanding Graphene: The Structure of Hydrogen-Intercalated Graphene on 6H-SiC(0001)

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2015
Major/Subject
Mcode
Degree programme
Language
en
Pages
1-6
Series
PHYSICAL REVIEW LETTERS, Volume 114, issue 10
Abstract
We measure the adsorption height of hydrogen-intercalated quasifreestanding monolayer graphene on the (0001) face of 6H silicon carbide by the normal incidence x-ray standing wave technique. A density functional calculation for the full (63√×63√)−R30° unit cell, based on a van der Waals corrected exchange correlation functional, finds a purely physisorptive adsorption height in excellent agreement with experiments, a very low buckling of the graphene layer, a very homogeneous electron density at the interface, and the lowest known adsorption energy per atom for graphene on any substrate. A structural comparison to other graphenes suggests that hydrogen-intercalated graphene on 6H−SiC(0001) approaches ideal graphene.
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Keywords
DFT, graphene, intercalated, silicon carbide, x-ray standing wave
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Citation
Sforzini, J, Nemec, L, Denig, T, Stadtmüller, B, Lee, T-L, Kumpf, C, Soubatch, S, Starke, U, Rinke, P, Blum, V, Bocquet, F C & Tautz, F S 2015, ' Approaching Truly Freestanding Graphene: The Structure of Hydrogen-Intercalated Graphene on 6H-SiC(0001) ', Physical Review Letters, vol. 114, no. 10, 106804, pp. 1-6 . https://doi.org/10.1103/PhysRevLett.114.106804