All-parylene flexible wafer-scale graphene thin film transistor

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2021-06-15
Department
Department of Electronics and Nanoengineering
VTT Technical Research Centre of Finland
Major/Subject
Mcode
Degree programme
Language
en
Pages
Series
Applied Surface Science, Volume 551
Abstract
Graphene is an ideal candidate as a component of flexible/wearable electronics due to its two-dimensional nature and low gate bias requirements for high quality devices. However, the proven methods for fabrication of graphene thin film transistors (TFTs) on fixed substrates involve using a sacrificial polymer layer to transfer graphene to a desired surface have led to mixed results for flexible devices. Here, by using the same polymer layer (parylene C) for both graphene transfer and the flexible substrate itself, we produced graphene TFTs on the wafer-scale requiring less than |2 V| gate bias and with high mechanical resilience of 30,000 bending cycles.
Description
Keywords
Flexible electronics, Flexible gate dielectric, Graphene, Parylene C, TFT, Thin film transistor, Two-dimensional materials
Other note
Citation
Kim , M , Mackenzie , D M A , Kim , W , Isakov , K & Lipsanen , H 2021 , ' All-parylene flexible wafer-scale graphene thin film transistor ' , Applied Surface Science , vol. 551 , 149410 . https://doi.org/10.1016/j.apsusc.2021.149410