Interference effects in photoreflectance of epitaxial layers grown on semi-insulating substrates

Loading...
Thumbnail Image
Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
1993
Major/Subject
Mcode
Degree programme
Language
en
Pages
2863-2865
Series
Applied Physics Letters, Volume 63, Issue 21
Abstract
Interferences were observed in the photoreflectance spectra of homoepitaxial layers grown on semi‐insulating GaAs and InP substrates. The modulation mechanism responsible for the interference effect was studied from the frequency and temperature dependence of the interference amplitude and the effect of continuous wave illumination. The results are in agreement with the model that the modulation is due to electrons drifting to the interface from the surface. A simple model was used to fit the interference spectra to the Lorentzian wave forms from the substrate and the epitaxial layer.
Description
Keywords
epitaxy, illumination, photoreflectance, semiconductors, interference
Other note
Citation
Lipsanen, Harri & Airaksinen, V. M. 1993. Interference effects in photoreflectance of epitaxial layers grown on semi-insulating substrates. Applied Physics Letters. Volume 63, Issue 21. P. 2863-2865. ISSN 0003-6951 (printed). DOI: 10.1063/1.110307.