A study of N-polar aluminum nitride thin films on silicon carbide substrates
dc.contributor | Aalto-yliopisto | fi |
dc.contributor | Aalto University | en |
dc.contributor.advisor | Suihkonen, Sami | |
dc.contributor.author | Ritari, Aleksi | |
dc.contributor.school | Sähkötekniikan korkeakoulu | fi |
dc.contributor.supervisor | Sopanen, Markku | |
dc.date.accessioned | 2019-03-17T16:10:25Z | |
dc.date.available | 2019-03-17T16:10:25Z | |
dc.date.issued | 2019-03-11 | |
dc.format.extent | 6+76 | |
dc.identifier.uri | https://aaltodoc.aalto.fi/handle/123456789/37201 | |
dc.identifier.urn | URN:NBN:fi:aalto-201903172341 | |
dc.language.iso | en | en |
dc.location | P1 | fi |
dc.programme | NanoRad - Master’s Programme in Nano and Radio Sciences (TS2013) | fi |
dc.programme.major | Micro- and Nanosciences | fi |
dc.programme.mcode | ELEC3037 | fi |
dc.subject.keyword | aluminum nitride | en |
dc.subject.keyword | MOCVD | en |
dc.subject.keyword | silicon carbide | en |
dc.subject.keyword | III-Ns on SiC | en |
dc.title | A study of N-polar aluminum nitride thin films on silicon carbide substrates | en |
dc.title | Tutkimus N-polarisista alumiininitridiohutkalvoista piikarbidialustakiteilla | fi |
dc.type | G2 Pro gradu, diplomityö | fi |
dc.type.ontasot | Master's thesis | en |
dc.type.ontasot | Diplomityö | fi |
local.aalto.electroniconly | yes | |
local.aalto.openaccess | no |