A study of N-polar aluminum nitride thin films on silicon carbide substrates

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.advisorSuihkonen, Sami
dc.contributor.authorRitari, Aleksi
dc.contributor.schoolSähkötekniikan korkeakoulufi
dc.contributor.supervisorSopanen, Markku
dc.date.accessioned2019-03-17T16:10:25Z
dc.date.available2019-03-17T16:10:25Z
dc.date.issued2019-03-11
dc.format.extent6+76
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/37201
dc.identifier.urnURN:NBN:fi:aalto-201903172341
dc.language.isoenen
dc.locationP1fi
dc.programmeNanoRad - Master’s Programme in Nano and Radio Sciences (TS2013)fi
dc.programme.majorMicro- and Nanosciencesfi
dc.programme.mcodeELEC3037fi
dc.subject.keywordaluminum nitrideen
dc.subject.keywordMOCVDen
dc.subject.keywordsilicon carbideen
dc.subject.keywordIII-Ns on SiCen
dc.titleA study of N-polar aluminum nitride thin films on silicon carbide substratesen
dc.titleTutkimus N-polarisista alumiininitridiohutkalvoista piikarbidialustakiteillafi
dc.typeG2 Pro gradu, diplomityöfi
dc.type.ontasotMaster's thesisen
dc.type.ontasotDiplomityöfi
local.aalto.electroniconlyyes
local.aalto.openaccessno
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