Ultrafast carrier dynamics and nonlinear optical response of InAsP nanowires

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2021-09-01
Major/Subject
Mcode
Degree programme
Language
en
Pages
9
1811-1819
Series
Photonics Research, Volume 9, issue 9
Abstract
Indium arsenide phosphide (InAsP) nanowires (NWs), a member of the III -V semiconductor family, have been used in various photonic and optoelectronic applications thanks to their unique electrical and optical properties such as high carrier mobility and adjustable band gap. In this work, we synthesize InAsP NWs and further explore their nonlinear optical properties. The ultrafast carrier dynamics and nonlinear optical response are thoroughly studied based on the nondegenerate pump probe and Z-scan experimental measurements. Two different characteristic carrier lifetimes (similar to 2 and similar to 15 ps) from InAsP NWs are observed during the excited-carrier relaxation process. Based on the physical model analysis, the relaxation process can be ascribed to the carrier cooling process via carrier-phonon scattering and Auger recombination. In addition, based on the measured excited-carrier lifetime and Pauli-blocking principle, we discover that InAsP NWs show strong saturable absorption properties at the wavelengths of 532 and 1064 nm. Last, we demonstrate for the first time a femtosecond (similar to 426 fs) solid-state laser based on an InAsP NWs saturable absorber at 1.04 mu m. We believe that our work provides a better understanding of the InAsP NWs optical properties and will further advance their photonic applications in the near-infrared range. (C) 2021 Chinese Laser Press
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Keywords
RECOMBINATION, PHOTODETECTORS, EFFICIENCY
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Citation
Liu , J , Yang , H , Khayrudinov , V , Lipsanen , H , Nie , H , Yang , K , Zhang , B & He , J 2021 , ' Ultrafast carrier dynamics and nonlinear optical response of InAsP nanowires ' , Photonics Research , vol. 9 , no. 9 , pp. 1811-1819 . https://doi.org/10.1364/PRJ.430172