Defect identification in semiconductors with positron annihilation: Experiment and theory
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Journal Title
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Literature review
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Author
Date
2013-11
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Language
en
Pages
49
1583-1631
1583-1631
Series
REVIEWS OF MODERN PHYSICS, Volume 85, issue 4
Abstract
Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.Description
Keywords
point defects, positron annihilation spectroscopy, semiconductors
Citation
Tuomisto , F & Makkonen , I 2013 , ' Defect identification in semiconductors with positron annihilation: Experiment and theory ' , Reviews of Modern Physics , vol. 85 , no. 4 , pp. 1583-1631 . https://doi.org/10.1103/RevModPhys.85.1583
