Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorSutter, Peteren_US
dc.contributor.authorIbragimova, Rinaen_US
dc.contributor.authorKomsa, Hannu Pekkaen_US
dc.contributor.authorParkinson, Bruce A.en_US
dc.contributor.authorSutter, Elien_US
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.groupauthorElectronic Properties of Materialsen
dc.contributor.organizationUniversity of Nebraska-Lincolnen_US
dc.contributor.organizationUniversity of Wyomingen_US
dc.date.accessioned2020-01-02T13:57:53Z
dc.date.available2020-01-02T13:57:53Z
dc.date.issued2019-12-01en_US
dc.description.abstractVertical van der Waals (vdW) heterostructures of 2D crystals with defined interlayer twist are of interest for band-structure engineering via twist moiré superlattice potentials. To date, twist-heterostructures have been realized by micromechanical stacking. Direct synthesis is hindered by the tendency toward equilibrium stacking without interlayer twist. Here, we demonstrate that growing a 2D crystal with fixed azimuthal alignment to the substrate followed by transformation of this intermediate enables a potentially scalable synthesis of twisted heterostructures. Microscopy during growth of ultrathin orthorhombic SnS on trigonal SnS2 shows that vdW epitaxy yields azimuthal order even for non-isotypic 2D crystals. Excess sulfur drives a spontaneous transformation of the few-layer SnS to SnS2, whose orientation – rotated 30° against the underlying SnS2 crystal – is defined by the SnS intermediate rather than the substrate. Preferential nucleation of additional SnS on such twisted domains repeats the process, promising the realization of complex twisted stacks by bottom-up synthesis.en
dc.description.versionPeer revieweden
dc.format.extent9
dc.format.extent1-9
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationSutter, P, Ibragimova, R, Komsa, H P, Parkinson, B A & Sutter, E 2019, ' Self-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformations ', Nature Communications, vol. 10, no. 1, 5528, pp. 1-9 . https://doi.org/10.1038/s41467-019-13488-5en
dc.identifier.doi10.1038/s41467-019-13488-5en_US
dc.identifier.issn2041-1723
dc.identifier.otherPURE UUID: 4b5ca415-0a02-4f25-bc2c-b4c7d0658b8aen_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/4b5ca415-0a02-4f25-bc2c-b4c7d0658b8aen_US
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85075997187&partnerID=8YFLogxKen_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/39587562/s41467_019_13488_5.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/42013
dc.identifier.urnURN:NBN:fi:aalto-202001021124
dc.language.isoenen
dc.publisherNATURE PUBLISHING GROUP
dc.relation.ispartofseriesNature Communicationsen
dc.relation.ispartofseriesVolume 10, issue 1en
dc.rightsopenAccessen
dc.titleSelf-organized twist-heterostructures via aligned van der Waals epitaxy and solid-state transformationsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

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