In-situ determination of InGaAs and GaAsN composition in multi-quantum-well structures

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorReentilä, O.
dc.contributor.authorMattila, M.
dc.contributor.authorSopanen, Markku
dc.contributor.authorLipsanen, H.
dc.contributor.departmentDepartment of Micro and Nanosciences
dc.date.accessioned2018-05-22T14:37:04Z
dc.date.available2018-05-22T14:37:04Z
dc.date.issued2007
dc.description.abstractMetal-organic vapor phase epitaxial growth of InGaAs/GaAs and GaAsN/GaAs multiquantum-well (MQW) structures was monitored by in situ reflectometry at 635 nm using a normal incidence reflectance setup. The reflectance signal is found to change significantly during both quantum-well (QW) and barrier growth regions. A matrix method is used to calculate the theoretical reflectance curve and comparing the theoretical curves to the measured ones the complex refractive index of the ternary alloys are derived. Consequently, when the behavior of the complex refractive indices of InGaAs and GaAsN is known as a function of composition, the composition of all the QWs in the MQW strucure can be determined in situ.en
dc.description.versionPeer revieweden
dc.format.extent5
dc.format.extent1-5
dc.format.mimetypeapplication/pdf
dc.identifier.citationReentilä , O , Mattila , M , Sopanen , M & Lipsanen , H 2007 , ' In-situ determination of InGaAs and GaAsN composition in multi-quantum-well structures ' , Journal of Applied Physics , vol. 101 , no. 3 , 033533 , pp. 1-5 . https://doi.org/10.1063/1.2435065en
dc.identifier.doi10.1063/1.2435065
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.otherPURE UUID: 5bc9777e-fee5-4572-830e-e16d831e50d4
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/5bc9777e-fee5-4572-830e-e16d831e50d4
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/14805329/1.2435065.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/30928
dc.identifier.urnURN:NBN:fi:aalto-201805222368
dc.language.isoenen
dc.relation.ispartofseriesJOURNAL OF APPLIED PHYSICSen
dc.relation.ispartofseriesVolume 101, issue 3en
dc.rightsopenAccessen
dc.titleIn-situ determination of InGaAs and GaAsN composition in multi-quantum-well structuresen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

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