Atomic and Molecular Layer Deposition of Alkali Metal Based Thin Films

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Journal Title
Journal ISSN
Volume Title
A2 Katsausartikkeli tieteellisessä aikakauslehdessä
Date
2021-12-08
Major/Subject
Mcode
Degree programme
Language
en
Pages
19
56793–56811
Series
ACS Applied Materials and Interfaces, Volume 13, issue 48
Abstract
Atomic layer deposition (ALD) is the fastest growing thin-film technology in microelectronics, but it is also recognized as a promising fabrication strategy for various alkali-metal-based thin films in emerging energy technologies, the spearhead application being the Li-ion battery. Since the pioneering work in 2009 for Li-containing thin films, the field has been rapidly growing and also widened from lithium to other alkali metals. Moreover, alkali-metal-based metal-organic thin films have been successfully grown by combining molecular layer deposition (MLD) cycles of the organic molecules with the ALD cycles of the alkali metal precursor. The current literature describes already around 100 ALD and ALD/MLD processes for alkali-metal-bearing materials. Interestingly, some of these materials cannot even be made by any other synthesis route. In this review, our intention is to present the current state of research in the field by (i) summarizing the ALD and ALD/MLD processes so far developed for the different alkali metals, (ii) highlighting the most intriguing thin-film materials obtained thereof, and (iii) addressing both the advantages and limitations of ALD and MLD in the application space of these materials. Finally, (iv) a brief outlook for the future perspectives and challenges of the field is given.
Description
Funding received from the Academy of Finland (Profi3, PREIN).
Keywords
alkali metals, atomic layer deposition, Li-ion battery, metal-organic hybrids, molecular layer deposition, thin films
Other note
Citation
Madadi, M, Heiska, J, Multia, J & Karppinen, M 2021, ' Atomic and Molecular Layer Deposition of Alkali Metal Based Thin Films ', ACS Applied Materials and Interfaces, vol. 13, no. 48, pp. 56793–56811 . https://doi.org/10.1021/acsami.1c17519