ALD/MLD processes for Mn and Co based hybrid thin films

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Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2016
Major/Subject
Mcode
Degree programme
Language
en
Pages
6
10730-10735
Series
DALTON TRANSACTIONS, Volume 45, issue 26
Abstract
Here we report the growth of novel transition metal-organic thin-film materials consisting of manganese or cobalt as the metal component and terephthalate as the rigid organic backbone. The hybrid thin films are deposited by the currently strongly emerging atomic/molecular layer deposition (ALD/MLD) technique using the combination of a metal β-diketonate, i.e. Mn(thd)3, Co(acac)3 or Co(thd)2, and terephthalic acid (1,4-benzenedicarboxylic acid) as precursors. All the processes yield homogeneous and notably smooth amorphous metal-terephthalate hybrid thin films with growth rates of 1-2 Å per cycle. The films are stable towards humidity and withstand high temperatures up to 300 or 400 °C under an oxidative or a reductive atmosphere. The films are characterized with XRR, AFM, GIXRD, XPS and FTIR techniques.
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Citation
Ahvenniemi , E & Karppinen , M 2016 , ' ALD/MLD processes for Mn and Co based hybrid thin films ' , Dalton Transactions , vol. 45 , no. 26 , pp. 10730-10735 . https://doi.org/10.1039/c6dt00851h