Direct GaAs Nanowire Growth and Monolithic LightEmitting Diode Fabrication on Flexible Plastic Substrates
Loading...
Access rights
openAccess
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal
View/Open full text file from the Research portal
Other link related to publication
View publication in the Research portal
View/Open full text file from the Research portal
Other link related to publication
Date
2022-08
Major/Subject
Mcode
Degree programme
Language
en
Pages
8
Series
Advanced Photonics Research, Volume 3, issue 8
Abstract
The growth of self-catalyzed GaAs nanowires (NWs) and monolithic light-emitting diode (LED) directly on flexible plastic substrates is reported. Dense GaAs NW forest is attained in self-catalyzed mode using metalorganic vapor phase epitaxy. The NWs are shown to be crystalline with a zinc-blende phase. The optical properties of the GaAs NWs are found to be promising in both photoluminescence emission and light-trapping based on reflectance and transmittance measurements. The LED is fabricated from p-type NWs by depositing Au as Ohmic contact and TiO2/ITO as an electron-selective contact. The demonstrated NW growth and LED fabrication represent a significant step toward low-cost, industrially feasible flexible III–V NW optoelectronic applications, as plastic is inexpensive, and the fabrication steps are compatible with roll-to-roll processing.Description
Keywords
GaAs nanowires, Bendable, Diodes, Flexible plastic substrates, Light-emitting
Other note
Citation
Khayrudinov , V , Sorokina , A , Raj , V , Gagrani , N , Koskinen , T , Jiang , H , Tittonen , I , Jagadish , C , Tan , HH , Lipsanen , H & Haggren , T 2022 , ' Direct GaAs Nanowire Growth and Monolithic LightEmitting Diode Fabrication on Flexible Plastic Substrates ' , Advanced Photonics Research , vol. 3 , no. 8 , 2100311 . https://doi.org/10.1002/adpr.202100311
