Direct GaAs Nanowire Growth and Monolithic LightEmitting Diode Fabrication on Flexible Plastic Substrates

The growth of self-catalyzed GaAs nanowires (NWs) and monolithic light-emitting diode (LED) directly on flexible plastic substrates is reported. Dense GaAs NW forest is attained in self-catalyzed mode using metalorganic vapor phase epitaxy. The NWs are shown to be crystalline with a zinc-blende phase. The optical properties of the GaAs NWs are found to be promising in both photoluminescence emission and light-trapping based on reflectance and transmittance measurements. The LED is fabricated from p-type NWs by depositing Au as Ohmic contact and TiO2/ITO as an electron-selective contact. The demonstrated NW growth and LED fabrication represent a significant step toward low-cost, industrially feasible flexible III–V NW optoelectronic applications, as plastic is inexpensive, and the fabrication steps are compatible with roll-to-roll processing.

Keywords

GaAs nanowires, Bendable, Diodes, Flexible plastic substrates, Light-emitting

DOI

10.1002/adpr.202100311

Citation

Khayrudinov , V , Sorokina , A , Raj , V , Gagrani , N , Koskinen , T , Jiang , H , Tittonen , I , Jagadish , C , Tan , HH , Lipsanen , H & Haggren , T 2022 , ' Direct GaAs Nanowire Growth and Monolithic LightEmitting Diode Fabrication on Flexible Plastic Substrates ' , Advanced Photonics Research , vol. 3 , no. 8 , 2100311 . https://doi.org/10.1002/adpr.202100311

Permanent link to this item

https://urn.fi/URN:NBN:fi:aalto-202308305295

Collections

[article-cris] Perustieteiden korkeakoulu / SCI

Show all metadata