Experimental and theoretical study of heterogeneous iron precipitation in silicon

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorHaarahiltunen, Antti
dc.contributor.authorVäinölä, Hele
dc.contributor.authorAnttila, O.
dc.contributor.authorYli-Koski, Marko
dc.contributor.departmentDepartment of Micro and Nanosciencesen
dc.contributor.departmentMikro- ja nanotekniikan laitosfi
dc.contributor.schoolSähkötekniikan korkeakoulufi
dc.contributor.schoolSchool of Electrical Engineeringen
dc.date.accessioned2015-04-09T09:01:35Z
dc.date.available2015-04-09T09:01:35Z
dc.date.issued2007
dc.description.abstractHeterogeneous iron precipitation in silicon was studied experimentally by measuring the gettering efficiency of oxide precipitate density of 1×10exp10cm−3. The wafers were contaminated with varying iron concentrations, and the gettering efficiency was studied using isothermal annealing in the temperature range from 300 to 780°C. It was found that iron precipitation obeys the so called s-curve behavior: if iron precipitation occurs, nearly all iron is gettered. For example, after 30 min annealing at 700°C, the highest initial iron concentration of 8×10exp13cm−3 drops to 3×10exp12cm−3, where as two lower initial iron concentrations of 5×10exp12 and 2×10exp13cm−3 remain nearly constant. This means that the level of supersaturation plays a significant role in the final gettering efficiency, and a rather high level of supersaturation is required before iron precipitation occurs at all. In addition, a model is presented for the growth and dissolution of iron precipitates at oxygen-related defects in silicon during thermal processing. The heterogeneous nucleation of iron is taken into account by special growth and dissolution rates, which are inserted into the Fokker-Planck equation. Comparison of simulated results to experimental ones proves that this model can be used to estimate internal gettering efficiency of iron under a variety of processing conditions.en
dc.description.versionPeer revieweden
dc.format.extent7
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHaarahiltunen, Antti & Väinölä, Hele & Anttila, O. & Yli-Koski, Marko. 2007. Experimental and theoretical study of heterogeneous iron precipitation in silicon. Journal of Applied Physics. Volume 101, Issue 4. 0021-8979 (printed). DOI: 10.1063/1.2472271en
dc.identifier.doi10.1063/1.2472271
dc.identifier.issn0021-8979 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/15603
dc.identifier.urnURN:NBN:fi:aalto-201504092257
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.relation.ispartofseriesVolume 101, Issue 4
dc.rightsCopyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. http://scitation.aip.org/content/aip/journal/japen
dc.rights.holderAmerican Institute of Physics
dc.subject.keywordironen
dc.subject.keywordsiliconen
dc.subject.keywordheterogeneous iron precipitationen
dc.subject.keywordoxide precipitateen
dc.subject.keywordgettering efficiencyen
dc.subject.keywordwaferen
dc.subject.keywordisothermal annealingen
dc.subject.keywordiron getteringen
dc.subject.otherEnergyen
dc.subject.otherPhysicsen
dc.subject.otherElectrical engineeringen
dc.titleExperimental and theoretical study of heterogeneous iron precipitation in siliconen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen
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