Hafnium Aluminate–Polymer Bilayer Dielectrics for Organic Light-Emitting Transistors (OLETs)

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorGallegos Rosas, Katherineen_US
dc.contributor.authorMyllymäki, Piaen_US
dc.contributor.authorSaarniheimo, Mikaelen_US
dc.contributor.authorSneck, Samien_US
dc.contributor.authorRaju, Rameshen_US
dc.contributor.authorSoldano, Caterinaen_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.groupauthorCaterina Soldano Groupen
dc.contributor.groupauthorIlkka Tittonen Groupen
dc.contributor.organizationBeneq Oyen_US
dc.date.accessioned2024-03-20T07:42:31Z
dc.date.available2024-03-20T07:42:31Z
dc.date.issued2024-02-27en_US
dc.description.abstractOrganic light-emitting transistors are thin-film transistors capable of generating and sensing light under appropriate bias conditions. Achieving a low-voltage operation while maintaining high efficiency can be obtained by using high-mobility semiconductors, highly efficient emissive layers, and high-capacitance dielectrics. We report on the fabrication, dielectric characterization, and implementation of (organic/inorganic) bilayer dielectric stacks in green organic light-emitting transistors. Our dielectric stack includes a nanoscale hafnium aluminate layer fabricated by atomic layer deposition and a thin layer of a polymer dielectric. We found that the hafnium aluminate layer is amorphous in nature and highly transparent in all the visible range. The bilayer stack showed around 10 times higher capacitance per unit area than our polymer reference dielectric. When used as a dielectric in organic light-emitting transistors, this stack enabled low leakage current and operation below 20 V, with a threshold around 6 V and similar efficiencies. Thus, engineering the dielectric layer can enable the tuning of the device working conditions and performances while keeping robustness and negligible leakage values. Thus, these findings open the way to use nanoscale organic/inorganic bilayer dielectrics to enable low-bias, low-power consumption optoelectronic devices of relevance for next-generation electronics applications.en
dc.description.versionPeer revieweden
dc.format.extent11
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationGallegos Rosas, K, Myllymäki, P, Saarniheimo, M, Sneck, S, Raju, R & Soldano, C 2024, ' Hafnium Aluminate–Polymer Bilayer Dielectrics for Organic Light-Emitting Transistors (OLETs) ', ACS Applied Electronic Materials, vol. 6, no. 2, pp. 1493-1503 . https://doi.org/10.1021/acsaelm.3c01813en
dc.identifier.doi10.1021/acsaelm.3c01813en_US
dc.identifier.issn2637-6113
dc.identifier.otherPURE UUID: fd60b30e-b411-4a18-b8fe-b66e189bc0e3en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/fd60b30e-b411-4a18-b8fe-b66e189bc0e3en_US
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85184916468&partnerID=8YFLogxK
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/141792545/gallegos-rosas-et-al-2024-hafnium-aluminate-polymer-bilayer-dielectrics-for-organic-light-emitting-transistors-_olets_.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/127246
dc.identifier.urnURN:NBN:fi:aalto-202403202883
dc.language.isoenen
dc.publisherAmerican Chemical Society
dc.relation.ispartofseriesACS Applied Electronic Materialsen
dc.relation.ispartofseriesVolume 6, issue 2, pp. 1493-1503en
dc.rightsopenAccessen
dc.subject.keywordatomic layer depositionen_US
dc.subject.keywordbilayer dielectricen_US
dc.subject.keywordhafnium aluminateen_US
dc.subject.keywordhigh-k dielectricen_US
dc.subject.keywordorganic light-emitting transistor (OLET)en_US
dc.subject.keywordorganic/inorganic dielectricen_US
dc.subject.keywordpoly(methyl methacrylate) (PMMA)en_US
dc.titleHafnium Aluminate–Polymer Bilayer Dielectrics for Organic Light-Emitting Transistors (OLETs)en
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

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