Magnetically active vacancy related defects in irradiated GaN layers
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© 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 101, Issue 7 and may be found at http://scitation.aip.org/content/aip/journal/apl/101/7/10.1063/1.4745776.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2012
Major/Subject
Mcode
Degree programme
Language
en
Pages
072102/1-3
Series
Applied Physics Letters, Volume 101, Issue 7
Abstract
We present the studies of magnetic properties of 2MeV4He+-irradiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with concentrations changing between 4.3 and 8.3×1017cm−3 showing superparamagnetic blocking at room temperature are observed. The appearance of clear hysteresis curve at T=5K with coercive field of about HC≈270 Oe suggests that the formation of more complex Ga vacancy related defects is promoted with increasing Ga vacancy content. The small concentration of the observed magnetically active defects with respect to the total Ga-vacancy concentration suggests that the presence of the oxygen/hydrogen-related vacancy complexes is the source of the observed magnetic moments.Description
Keywords
Ga vacancy, magnetic ordering, GaN
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Citation
Kilanski, L. & Tuomisto, Filip & Szymczak, R. & Kruszka, R.. 2012. Magnetically active vacancy related defects in irradiated GaN layers. Applied Physics Letters. Volume 101, Issue 7. 072102/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.4745776