Statistics of electron tunneling in normal tunnel junctions: An analytical and numerical study including circuit effects
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© 2006 American Physical Society (APS). This is the accepted version of the following article: Hakonen, Pertti J. & Paila, A. & Sonin, E. B. 2006. Statistics of electron tunneling in normal tunnel junctions: An analytical and numerical study including circuit effects. Physical Review B. Volume 74, Issue 19. 195322/1-8. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.74.195322, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.74.195322.
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2006
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en
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195322/1-8
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Physical Review B, Volume 74, Issue 19
Abstract
Statistics of electron tunneling in normal tunnel junctions is studied analytically and numerically taking into account circuit (environment) effects. Full counting statistics, as well as full statistics of voltage and phase have been found for arbitrary times of observation. The theoretical analysis was based on the classical master equation, whereas the numerical simulations employed standard Monte-Carlo methods.Description
Keywords
electron tunneling, normal tunnel junction, circuit effect
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Citation
Hakonen, Pertti J. & Paila, A. & Sonin, E. B. 2006. Statistics of electron tunneling in normal tunnel junctions: An analytical and numerical study including circuit effects. Physical Review B. Volume 74, Issue 19. 195322/1-8. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.74.195322