Yield and leakage currents of large area lattice matched InP/InGaAs heterostructures

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2014

Department

Department of Neuroscience and Biomedical Engineering
Department of Micro and Nanosciences
Aalto Nanofab

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Mcode

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Language

en

Pages

6

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Journal of Applied Physics, Volume 116, issue 8, pp. 1-6

Abstract

Demonstrating and harnessing electroluminescent cooling at technologically viable cooling powers requires the ability to routinely fabricate large area high quality light-emitting diodes (LEDs). Detailed information on the performance and yield of relevant large area devices is not available, however. Here, we report extensive information on the yield and related large area scaling of InP/InGaAs LEDs and discuss the origin of the failure mechanisms based on lock-in thermographic imaging. The studied LEDs were fabricated as mesa structures of various sizes on epistructures grown at five different facilities specialized in the growth of III-V compound semiconductors. While the smaller mesas generally showed relatively good electrical characteristics and low leakage current densities, some of them also exhibited unusually large leakage current densities. The provided information is critical for the development and design of the optical cooling technologies relying on large area devices.

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DOI

10.1063/1.4894005

Citation

Olsson, A, Aierken, A, Jussila, H, Bauer, J, Oksanen, J, Breitenstein, O, Lipsanen, H & Tulkki, J 2014, 'Yield and leakage currents of large area lattice matched InP/InGaAs heterostructures', Journal of Applied Physics, vol. 116, no. 8, 083105, pp. 1-6. https://doi.org/10.1063/1.4894005

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https://urn.fi/URN:NBN:fi:aalto-202510087648

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[article-cris] Perustieteiden korkeakoulu / SCI