Kinetic inductance in superconducting CoSi2 coplanar microwave transmission lines

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Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2024-04-01
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Language
en
Pages
7
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APL Materials, Volume 12, issue 4, pp. 1-7
Abstract
We have looked into cobalt disilicide (CoSi2) as a potential building block for superconducting quantum circuits. In order to achieve this, we annealed a thin layer of Co to create microwave cavities with thickness of d = 10-105 nm from CoSi2 embedded in the silicon substrate. The cavity properties were measured as a function of temperature and power. In the films measuring 10 and 25 nm, we find a significant kinetic inductance LK with a non-BCS power-law variation δLK ∝ T4.3±0.2 at low temperatures. The quality factor of the studied microwave resonances varied from 3 × 103 (d = 10 nm) to ∼5 × 104 (d = 105 nm) and increased as d(A − log d) with thickness, with two-level systems having very little effect. The power dependence of kinetic inductance was analyzed in terms of heat flow due to electron-phonon coupling, which was found to be stronger than estimated for heat relaxation by regular quasiparticles.
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Publisher Copyright: © 2024 Author(s). | openaire: EC/H2020/824109/EU//EMP
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Citation
Mukhanova, E, Zeng, W, Heredia, E A, Wu, C W, Lilja, I, Lin, J J, Yeh, S S & Hakonen, P 2024, ' Kinetic inductance in superconducting CoSi 2 coplanar microwave transmission lines ', APL Materials, vol. 12, no. 4, 041115, pp. 1-7 . https://doi.org/10.1063/5.0195106