Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects

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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
1997
Major/Subject
Mcode
Degree programme
Language
en
Pages
4473-4476
Series
Physical Review B, Volume 55, Issue 7
Abstract
Stressor-induced InxGa1−xAs quantum dot structures of high structural quality allow a detailed experimental investigation of carrier relaxation between distinct zero-dimensional quantized states. Time-resolved photoluminescence studies combined with appropriate model calculations show that state filling effects, Coulomb scattering, and acoustic phonon scattering determine the relaxation scenario in a way characteristic for a zero-dimensional electronic system. These investigations allow a quantitative estimation of the inter-dot-level relaxation rates mediated by (i) Coulomb scattering and (ii) acoustic phonon scattering.
Description
Keywords
quantum dots, carrier relaxation dynamics
Other note
Citation
Grosse, S. & Sandmann, J. H. H. & von Plessen, G. & Feldmann, J. & Lipsanen, Harri & Sopanen, M. & Tulkki, J. & Ahopelto, J. 1997. Carrier relaxation dynamics in quantum dots: Scattering mechanisms and state-filling effects. Physical Review B. Volume 55, Issue 7. P. 4473-4476. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.55.4473.