Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorPasanen, Tonien_US
dc.contributor.authorVähänissi, Villeen_US
dc.contributor.authorTheut, Nicholasen_US
dc.contributor.authorSavin, Heleen_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen_US
dc.contributor.departmentArizona State Universityen_US
dc.date.accessioned2017-10-15T20:38:56Z
dc.date.available2017-10-15T20:38:56Z
dc.date.issued2017-09-21en_US
dc.description.abstractBlack silicon (b-Si) is a promising surface structure for solar cells due to its low reflectance and excellent light trapping properties. While atomic layer deposited (ALD) Al2O3 has been shown to passivate efficiently lightly-doped b-Si surfaces and boron emitters, the negative fixed charge characteristic of Al2O3 thin films makes it unfavorable for the passivation of more commonly used n+ emitters. This work studies the potential of ALD SiO2/Al2O3 stacks for the passivation of b-Si phosphorus emitters fabricated by an industrially viable POCl3 gas phase diffusion process. The stacks have positive charge density (Qtot = 5.5·1011 cm-2) combined with high quality interface (Dit = 2.0·1011 cm-2eV-1) which is favorable for such heavily-doped n-type surfaces. Indeed, a clear improvement in emitter saturation current density, J0e, is achieved with the stacks compared to bare Al2O3 in both b-Si and planar emitters. However, although the positive charge density in the case of black silicon is even higher (Qtot = 2.0·1012 cm-2), the measured J0e is limited by the recombination in the emitter due to heavy doping of the nanostructures. The results thus imply that in order to obtain lower saturation current density on b-Si, careful optimization of the black silicon emitter profile is needed.en
dc.description.versionPeer revieweden
dc.format.extent6
dc.format.extent307-312
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationPasanen , T , Vähänissi , V , Theut , N & Savin , H 2017 , Surface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacks . in 7th International Conference on Silicon Photovoltaics, SiliconPV 2017 . vol. 124 , Energy Procedia , Elsevier BV , pp. 307-312 , International Conference on Crystalline Silicon Photovoltaics , Freiburg , Germany , 03/04/2017 . https://doi.org/10.1016/j.egypro.2017.09.304en
dc.identifier.doi10.1016/j.egypro.2017.09.304en_US
dc.identifier.issn1876-6102
dc.identifier.otherPURE UUID: 60e53627-2fe9-43db-8dcc-b784db07c291en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/60e53627-2fe9-43db-8dcc-b784db07c291en_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/133846275/pasanen_et_al_energy_procedia.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/28201
dc.identifier.urnURN:NBN:fi:aalto-201710157061
dc.language.isoenen
dc.publisherElsevier
dc.relation.ispartofInternational Conference on Crystalline Silicon Photovoltaicsen
dc.relation.ispartofseries7th International Conference on Silicon Photovoltaics, SiliconPV 2017en
dc.relation.ispartofseriesVolume 124en
dc.relation.ispartofseriesEnergy Procediaen
dc.rightsopenAccessen
dc.subject.keywordblack siliconen_US
dc.subject.keywordsurface passivationen_US
dc.subject.keywordphosphorus diffusionen_US
dc.subject.keywordatomic layer depositionen_US
dc.subject.keywordSiO2en_US
dc.subject.keywordAl2O3en_US
dc.titleSurface passivation of black silicon phosphorus emitters with atomic layer deposited SiO2/Al2O3 stacksen
dc.typeConference article in proceedingsfi
dc.type.versionpublishedVersion
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