Self-compensation in highly n-type InN

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© 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 101, Issue 1 and may be found at http://scitation.aip.org/content/aip/journal/apl/101/1/10.1063/1.4732508.
Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2012
Major/Subject
Mcode
Degree programme
Language
en
Pages
011903/1-4
Series
Applied Physics Letters, Volume 101, Issue 1
Abstract
Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.
Description
Keywords
indium nitride, compensation, defects, mobility, positron annihilation
Other note
Citation
Rauch, C. & Tuomisto, Filip & King, P. D. C. & Veal, T. D. & Lu, H. & Schaff, W. J. 2012. Self-compensation in highly n-type InN. Applied Physics Letters. Volume 101, Issue 1. 011903/1-4. ISSN 0003-6951 (printed). DOI: 10.1063/1.4732508