Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorShalygin, V. A.
dc.contributor.authorMoldavskaya, M. D.
dc.contributor.authorVinnichenko, M. Ya
dc.contributor.authorMaremyanin, K. V.
dc.contributor.authorArtemyev, A. A.
dc.contributor.authorPanevin, V. Yu
dc.contributor.authorVorobjev, L. E.
dc.contributor.authorFirsov, D. A.
dc.contributor.authorKorotyeyev, V. V.
dc.contributor.authorSakharov, A. V.
dc.contributor.authorZavarin, E. E.
dc.contributor.authorArteev, D. S.
dc.contributor.authorLundin, W. V.
dc.contributor.authorTsatsulnikov, A. F.
dc.contributor.authorSuihkonen, S.
dc.contributor.authorKauppinen, C.
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.groupauthorMarkku Sopanen Groupen
dc.contributor.organizationPeter the Great St. Petersburg Polytechnic University
dc.contributor.organizationRAS - Institute for Physics of Microstructures
dc.contributor.organizationInstitute of Semiconductor Physics NASU
dc.contributor.organizationIoffe Institute
dc.contributor.organizationRussian Academy of Sciences
dc.date.accessioned2020-01-02T14:06:27Z
dc.date.available2020-01-02T14:06:27Z
dc.date.embargoinfo:eu-repo/date/embargoEnd/2020-11-19
dc.date.issued2019-11-14
dc.description.abstractTerahertz radiation emission from an electrically excited AlGaN/GaN heterostructure with a surface metal grating was studied under conditions of two-dimensional (2D) electron heating by the lateral electric field. Intensive peaks related to nonequilibrium 2D plasmons were revealed in the terahertz emission spectra with up to 4 times selective amplification of the radiation emission in the vicinity of 2D plasmon resonance. This selective emission was shown to be frequency-controllable by the grating period. Exact spectral positions of the 2D plasmon resonances were preliminarily experimentally detected with the help of equilibrium transmission spectra measured at various temperatures. The resonance positions are in a satisfactory agreement with the results of theoretical simulation of the transmission spectra performed using a rigorous solution of Maxwell's equations. The effective temperature of hot 2D electrons was determined by means of I- V characteristics and their analysis using the power balance equation. It was shown that for a given electric field, the effective temperature of nonequilibrium 2D plasmons is close to the hot 2D electron temperature. The work may have applications in GaN-based electrically pumped emitters of terahertz radiation.en
dc.description.versionPeer revieweden
dc.format.mimetypeapplication/pdf
dc.identifier.citationShalygin, V A, Moldavskaya, M D, Vinnichenko, M Y, Maremyanin, K V, Artemyev, A A, Panevin, V Y, Vorobjev, L E, Firsov, D A, Korotyeyev, V V, Sakharov, A V, Zavarin, E E, Arteev, D S, Lundin, W V, Tsatsulnikov, A F, Suihkonen, S & Kauppinen, C 2019, 'Selective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructure', Journal of Applied Physics, vol. 126, no. 18, 183104. https://doi.org/10.1063/1.5118771en
dc.identifier.doi10.1063/1.5118771
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.otherPURE UUID: a76b4059-260b-4bac-9f55-f24c902104be
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/a76b4059-260b-4bac-9f55-f24c902104be
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/39178690/ELEC_Suihkonen_Selective_JoAP.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/42170
dc.identifier.urnURN:NBN:fi:aalto-202001021281
dc.language.isoenen
dc.publisherAmerican Institute of Physics
dc.relation.fundinginfoWe thank V. I. Gavrilenko, A. V. Antonov, A. A. Toropov, and A. N. Poddubny for helpful discussions, and Mathias Meschke for advice on the electron beam lithography process. Financial supports from the Russian Foundation for Basic Research (Grant No. 18-02-00848) and the Ministry of Science and Higher Education of the Russian Federation (State Assignment No. 3.933.2017/4.6) are gratefully acknowledged.
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.relation.ispartofseriesVolume 126, issue 18en
dc.rightsopenAccessen
dc.titleSelective terahertz emission due to electrically excited 2D plasmons in AlGaN/GaN heterostructureen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

Files