Characterizations of vacancy defects in compound semiconductors by positron lifetime and Doppler broadening experiments

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorSimula, Sami
dc.contributor.departmentTietotekniikan osastofi
dc.contributor.schoolTeknillinen korkeakoulufi
dc.contributor.schoolHelsinki University of Technologyen
dc.contributor.supervisorHautojärvi, Pekka 
dc.date.accessioned2020-12-03T19:23:25Z
dc.date.available2020-12-03T19:23:25Z
dc.date.issued1995 
dc.format.extent100 
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/83721
dc.identifier.urnURN:NBN:fi:aalto-2020120342559
dc.language.isoenen
dc.programme.majorFysiikkafi
dc.programme.mcodeTfy-3fi
dc.rights.accesslevelclosedAccess
dc.titleCharacterizations of vacancy defects in compound semiconductors by positron lifetime and Doppler broadening experimentsen
dc.titleYhdistepuolijohteiden vakanssivirheiden tarkastelu positronin elinaika- ja Doppler-levenemäkokeiden avullafi
dc.type.okmG2 Pro gradu, diplomityö 
dc.type.ontasotMaster's thesisen
dc.type.ontasotPro gradu -tutkielmafi
dc.type.publicationmasterThesis 
local.aalto.digiauthask
local.aalto.digifolderAalto_43820
local.aalto.idinssi10787
local.aalto.openaccessno
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