Observation of defect complexes containing Ga vacancies in GaAsN

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Journal Title
Journal ISSN
Volume Title
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2003
Major/Subject
Mcode
Degree programme
Language
en
Pages
40-42
Series
Applied Physics Letters, Volume 82, Issue 1
Abstract
Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 1018 cm−3 with increasing N composition and decreases after annealing at 700 °C. The anticorrelation of the vacancy concentration and the integrated photoluminescence intensity suggests that the Ga vacancy complexes act as nonradiative recombination centers.
Description
Keywords
vacancies, annealing, photoluminescence, positrons, compound semiconductors, metalorganic vapor phase epitaxy, dilute nitrides, positron spectroscopy
Other note
Citation
Toivonen, J. & Hakkarainen, T. & Sopanen, M. & Lipsanen, Harri & Oila, J. & Saarinen, K. 2003. Observation of defect complexes containing Ga vacancies in GaAsN. Applied Physics Letters. Volume 82, Issue 1. P. 40-42. ISSN 0003-6951 (printed). DOI: 10.1063/1.1533843.