Direct antisite formation in electron irradiation GaAs

Abstract

We investigate the antisite formation in GaAs by molecular dynamics simulation with a realistic many-atom potential. The recoil energies are chosen to correspond to the values encountered in electron irradiation experiments. The probability of forming antisites directly during the cascade is substantial. The antisite defects are stable and are likely to survive during long-term annealing. We estimate the angle-dependent threshold for antisite formation and discuss the creation mechanism. The cross sections for antisite and vacancy formation are compared.