Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscopy imaging

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© 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, Volume 116, Issue 7 and may be found at http://scitation.aip.org/content/aip/journal/jap/116/7/10.1063/1.4893473
Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2014
Major/Subject
Mcode
Degree programme
Language
en
Pages
073702/1-4
Series
Journal of Applied Physics, Volume 116, Issue 7
Abstract
We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the effective area of a conduction channel is about one order of magnitude larger than predicted by theoretical calculations. With the second method, transmission electron microscopy, we demonstrate that variations in the barrier thickness are a plausible explanation for the larger effective area and an enhancement of higher order tunneling processes.
Description
Keywords
transmission electron microscopy, tunneling, aluminium, copper, tunnel junctions, SET, TEM
Other note
Citation
Aref, T. & Averin, A. & van Dijken, S. & Ferring, A. & Koberidze, M. & Maisi, V. F. & Nguyend, H. Q. & Nieminen, R. M. & Pekola, Jukka & Yao, L. D. 2014. Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscopy imaging. Journal of Applied Physics. Volume 116, Issue 7. 073702/1-4. ISSN 0021-8979 (printed). DOI: 10.1063/1.4893473.