Spatial uniformity of black silicon induced junction photodiode responsivity

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Conference article in proceedings
Date
2023-03-14
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Language
en
Pages
7
Series
SPIE Conference Proceedings
Abstract
Black silicon induced junction photodiodes have nearly ideal responsivity across a wide range of wavelengths between 175-1100 nm, with external quantum efficiency over 99 % at visible wavelengths, when a single spot is measured using light beam between 1 to 2mm in diameter. The spatial uniformity of responsivity is also an important characteristic of a high-quality photodiode, when considering its usage as a reference in photometry. We study here the spatial uniformity of responsivity of large area (8mmx8mm) black silicon photodiodes at 405 nm wavelength. Our results show that the spatial non-uniformity is less than 0.5 % over 90 % of the surface area, and thus the photodiodes meet the thigh criteria typically set for reference standards and are hence suitable for such application.
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Keywords
Black silicon, spatial uniformity, silicon, photodiode
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Citation
Heinonen, J, Haarahiltunen, A, Vähänissi, V, Pasanen, T P, Savin, H, Toivanen, J & Juntunen, M A 2023, Spatial uniformity of black silicon induced junction photodiode responsivity . in S Jiang & M J Digonnet (eds), Optical Components and Materials XX ., 1241713, Proceedings of SPIE : the International Society for Optical Engineering, SPIE, Optical Components and Materials, San Francisco, California, United States, 28/01/2023 . https://doi.org/10.1117/12.2649636