Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscopy imaging
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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4
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Journal of Applied Physics, Volume 116, issue 7, pp. 1-4
Abstract
We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the effective area of a conduction channel is about one order of magnitude larger than predicted by theoretical calculations. With the second method, transmission electron microscopy, we demonstrate that variations in the barrier thickness are a plausible explanation for the larger effective area and an enhancement of higher order tunneling processes.Description
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Aref, T, Averin, A, van Dijken, S, Ferring, A, Koberidze, M, Maisi, V, Nguyend, H Q, Nieminen, R M, Pekola, J P & Yao, L D 2014, 'Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscopy imaging', Journal of Applied Physics, vol. 116, no. 7, 073702, pp. 1-4. https://doi.org/10.1063/1.4893473