Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation
Loading...
Access rights
openAccess
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
Date
1999-08-02
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
3
728-730
728-730
Series
Applied Physics Letters, Volume 75, issue 5
Abstract
A multiwalled carbon nanotube (MWNT) based single-electron transistors (SET) were manufactured using atomic force microscopy (AFM) manipulation. Its current-voltage characteristics were measured. Single-electron charging effects were shown through gate modulation. The results imply the MWNT to be semiconducting with a gap of 15 meV. The Coulomb staircase structure in the data agrees with the asymmetry of the tunnel junctions. The method combined with electron-beam soldering opens new possibilities to optimize junction parameters for specific purposes. This could give new opportunities in the fabrication of single electron transistors.Description
Keywords
carbon nanotube, single-electron transistor
Other note
Citation
Roschier , L , Penttilä , J , Martin , M , Hakonen , P , Paalanen , M , Tapper , U , Kauppinen , E I , Journet , C & Bernier , P 1999 , ' Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation ' , Applied Physics Letters , vol. 75 , no. 5 , pp. 728-730 . https://doi.org/10.1063/1.124495