Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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3
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Applied Physics Letters, Volume 75, issue 5, pp. 728-730
Abstract
A multiwalled carbon nanotube (MWNT) based single-electron transistors (SET) were manufactured using atomic force microscopy (AFM) manipulation. Its current-voltage characteristics were measured. Single-electron charging effects were shown through gate modulation. The results imply the MWNT to be semiconducting with a gap of 15 meV. The Coulomb staircase structure in the data agrees with the asymmetry of the tunnel junctions. The method combined with electron-beam soldering opens new possibilities to optimize junction parameters for specific purposes. This could give new opportunities in the fabrication of single electron transistors.Description
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Roschier, L, Penttilä, J, Martin, M, Hakonen, P, Paalanen, M, Tapper, U, Kauppinen, E I, Journet, C & Bernier, P 1999, 'Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation', Applied Physics Letters, vol. 75, no. 5, pp. 728-730. https://doi.org/10.1063/1.124495