Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
1999-08-02
Major/Subject
Mcode
Degree programme
Language
en
Pages
3
728-730
Series
Applied Physics Letters, Volume 75, issue 5
Abstract
A multiwalled carbon nanotube (MWNT) based single-electron transistors (SET) were manufactured using atomic force microscopy (AFM) manipulation. Its current-voltage characteristics were measured. Single-electron charging effects were shown through gate modulation. The results imply the MWNT to be semiconducting with a gap of 15 meV. The Coulomb staircase structure in the data agrees with the asymmetry of the tunnel junctions. The method combined with electron-beam soldering opens new possibilities to optimize junction parameters for specific purposes. This could give new opportunities in the fabrication of single electron transistors.
Description
Keywords
carbon nanotube, single-electron transistor
Other note
Citation
Roschier , L , Penttilä , J , Martin , M , Hakonen , P , Paalanen , M , Tapper , U , Kauppinen , E I , Journet , C & Bernier , P 1999 , ' Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation ' , Applied Physics Letters , vol. 75 , no. 5 , pp. 728-730 . https://doi.org/10.1063/1.124495