Optical and structural characterization of InGaN/GaN multiple quantum well structures irradiated by high energy heavy ions

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Faculty of Electronics, Communications and Automation | Master's thesis
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Author
Date
2008
Department
Department of Micro and Nanosciences
Mikro- ja nanotekniikan laitos
Major/Subject
Optoelectronics
Optoelektroniikka
Mcode
S-104
Degree programme
Elektroniikan ja sähkötekniikan koulutus-/tutkinto-ohjelma
Language
en
Pages
49
Series
Abstract
This topic is a cooperation project between Helsinki University of Technology (TKK) and Uppsala University (UU). Multiple quantum wells (MQWs) were grown and characterized in Department of Micro and Nanosciences of TKK. The samples were irradiated in Ångström Laboratory of UU. In this thesis, quantum well (QW) structures based on InGaN/GaN material system have been grown by using metalorganic vapor phase epitaxy (MOVPE). The samples grown had 5 and 10 quantum wells with 6 and 10% of indium, respectively. Iodine and bromine have been used as irradiations ions. The irradiation fluences of these ions were varied from 109 to 1012 ions/cm2. Our X-ray diffraction results have shown no signs of a major crystal damage on the quantum wells. The photoluminescence results indicate a strong dependence of the optical properties on the type and fluence of ions used for irradiation.
Description
Supervisor
Sopanen, Markku; Dosentti
Thesis advisor
Ali, Muhammad; DI
Keywords
gallium nitride, indium gallium nitride, metalorganic vapor phase epitaxy, multiple quantum well, x-ray, photoluminescence, irradiation, fluence
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Permanent link to this item
https://urn.fi/urn:nbn:fi:tkk-012900
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[dipl] Sähkötekniikan korkeakoulu / ELEC