InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorTaupin, Mathieu
dc.contributor.authorMannila, Elsa
dc.contributor.authorKrogstrup, P.
dc.contributor.authorMaisi, Ville
dc.contributor.authorNguyen, Hung
dc.contributor.authorAlbrecht, S.M
dc.contributor.authorNygård, J.
dc.contributor.authorMarcus, C.M.
dc.contributor.authorPekola, Jukka
dc.contributor.departmentDepartment of Applied Physics
dc.contributor.departmentUniversity of Copenhagen
dc.date.accessioned2016-12-16T14:09:50Z
dc.date.issued2016-11-28
dc.description.versionPeer revieweden
dc.format.mimetypeapplication/pdf
dc.identifier.citationTaupin , M , Mannila , E , Krogstrup , P , Maisi , V , Nguyen , H , Albrecht , S M , Nygård , J , Marcus , C M & Pekola , J 2016 , ' InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers ' , Physical Review Applied , vol. 6 , 054017 , pp. 1-7 . https://doi.org/10.1103/PhysRevApplied.6.054017en
dc.identifier.doi10.1103/PhysRevApplied.6.054017
dc.identifier.issn2331-7019
dc.identifier.otherPURE UUID: 5804c10d-5ca6-4d7d-a9da-2d7888083e0a
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/5804c10d-5ca6-4d7d-a9da-2d7888083e0a
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/9710561/PhysRevApplied.6.054017.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/23790
dc.identifier.urnURN:NBN:fi:aalto-201612165967
dc.language.isoenen
dc.relation.ispartofseriesPHYSICAL REVIEW APPLIEDen
dc.relation.ispartofseriesVolume 6, issue 054017en
dc.rightsopenAccessen
dc.titleInAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriersen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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