InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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2016-11-28
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en
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PHYSICAL REVIEW APPLIED, Volume 6, issue 054017
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Taupin , M , Mannila , E , Krogstrup , P , Maisi , V , Nguyen , H , Albrecht , S M , Nygård , J , Marcus , C M & Pekola , J 2016 , ' InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers ' , Physical Review Applied , vol. 6 , 054017 , pp. 1-7 . https://doi.org/10.1103/PhysRevApplied.6.054017