InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2016-11-28
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en
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PHYSICAL REVIEW APPLIED, Volume 6, issue 054017
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Taupin, M, Mannila, E, Krogstrup, P, Maisi, V, Nguyen, H, Albrecht, S M, Nygård, J, Marcus, C M & Pekola, J 2016, ' InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers ', Physical Review Applied, vol. 6, 054017, pp. 1-7 . https://doi.org/10.1103/PhysRevApplied.6.054017