Cul p-type thin films for highly transparent thermoelectric p-n modules

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2018-05-02
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Mcode
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Language
en
Pages
10
Series
SCIENTIFIC REPORTS, Volume 8
Abstract
Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of Cul have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (sigma = 1.1 x 10(4) Sm-1) and thermoelectric properties (ZT= 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.
Description
| openaire: EC/H2020/645241/EU//TransFlexTeg
Keywords
OXIDE
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Citation
Morais Faustino, B M, Gomes, D, Faria, J, Juntunen, T, Gaspar, G, Bianchi, C, Almeida, A, Marques, A, Tittonen, I & Ferreira, I 2018, ' Cul p-type thin films for highly transparent thermoelectric p-n modules ', Scientific Reports, vol. 8, 6867 . https://doi.org/10.1038/s41598-018-25106-3