Eliminating light-induced degradation in commercial p-Type Czochralski silicon solar cells

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Journal Title
Journal ISSN
Volume Title
A2 Katsausartikkeli tieteellisessä aikakauslehdessä
Date
2018
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Mcode
Degree programme
Language
en
Pages
Series
Applied Sciences (Switzerland), Volume 8, issue 1
Abstract
This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.
Description
Keywords
Boron-oxygen, Hydrogen passivation, Light-induced degradation, P-type Czochralski, Regeneration, Silicon solar cell
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Citation
Hallam, B, Herguth, A, Hamer, P, Nampalli, N, Wilking, S, Abbott, M, Wenham, S & Hahn, G 2018, ' Eliminating light-induced degradation in commercial p-Type Czochralski silicon solar cells ', Applied Sciences (Switzerland), vol. 8, no. 1, 10 . https://doi.org/10.3390/app8010010