Deactivation of Li by vacancy clusters in ion implanted and flash-annealed ZnO

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2006-10
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Mcode
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Language
en
Pages
4
1-4
Series
PHYSICAL REVIEW B, Volume 74, issue 16
Abstract
Li is present in hydrothermally grown ZnO at high concentrations and is known to compensate both n- and p-type doping due to its amphoteric nature. However, Li can be manipulated by annealing and ion implantation in ZnO. Fast, 20ms flash anneals in the 900–1400°C range result in vacancy cluster formation and, simultaneously, a low-resistive layer in the implanted part of the He- and Li-implanted ZnO. The vacancy clusters, involving 3-4 Zn vacancies, trap and deactivate Li, leaving other in-grown donors to determine the electrical properties. Such clusters are not present in sufficient concentrations after longer (1h) anneals because of a relatively low dissociation barrier ∼2.6±0.3eV, so ZnO remains compensated until Li diffuses out after 1250°C anneals.
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Keywords
deactivation, Lithium, vacancy cluster, ZnO
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Citation
Moe Børseth , T , Tuomisto , F , Christensen , J S , Skorupa , W , Monakhov , E V , Svensson , B G & Kuznetsov , A Y 2006 , ' Deactivation of Li by vacancy clusters in ion implanted and flash-annealed ZnO ' , Physical Review B , vol. 74 , no. 16 , 161202 , pp. 1-4 . https://doi.org/10.1103/PhysRevB.74.161202