Klein tunneling through the trapezoidal potential barrier in graphene: Conductance and shot noise

Loading...
Thumbnail Image
Access rights
openAccess
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2021-04
Major/Subject
Mcode
Degree programme
Language
en
Pages
18
Series
New Journal of Physics, Volume 23, issue 4
Abstract
When a single-layer graphene sheet is contacted with metallic electrodes, tunnel barriers are formed as a result of the doping of graphene by the metal in the contact region. If the Fermi energy level is modulated by a gate voltage, the phenomenon of Klein tunneling results in specific features in the conductance and noise. Here we obtain analytically exact solutions for the transmission and reflection probability amplitudes using a trapezoidal potential barrier, allowing us to calculate the differential conductance and the Fano factor for a graphene sheet in the ballistic regime.We put in evidence an unexpected global symmetry-the transmission probability is the same for energies symmetric with respect to half of the barrier height.We outline a proposal for the experimental verification of these ideas using realistic sample parameters.
Description
| openaire: EC/H2020/824109/EU//EMP
Keywords
Doping, Electrical conductivity, Fano factor, Graphene, Klein tunneling
Other note
Citation
Paraoanu, G S 2021, ' Klein tunneling through the trapezoidal potential barrier in graphene : Conductance and shot noise ', New Journal of Physics, vol. 23, no. 4, 043027 . https://doi.org/10.1088/1367-2630/abe1e6