Binding energies of exciton complexes in transition metal dichalcogenide monolayers and effect of dielectric environment

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorKylänpää, I.en_US
dc.contributor.authorKomsa, Hannu-Pekkaen_US
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.groupauthorElectronic Properties of Materialsen
dc.date.accessioned2018-08-08T09:59:48Z
dc.date.available2018-08-08T09:59:48Z
dc.date.issued2015en_US
dc.description.abstractExcitons, trions, biexcitons, and exciton-trion complexes in two-dimensional transition metal dichalcogenide sheets of MoS2, MoSe2, MoTe2, WS2, and WSe2 are studied by means of density functional theory and path-integral Monte Carlo method in order to accurately account for the particle-particle correlations. In addition, the effect of dielectric environment on the properties of these exciton complexes is studied by modifying the effective interaction potential between particles. Calculated exciton and trion binding energies are consistent with previous experimental and computational studies, and larger systems such as biexciton and exciton-trion complex are found highly stable. Binding energies of biexcitons are similar to or higher than those of trions, but the binding energy of the trion depends significantly stronger on the dielectric environment than that of biexciton. Therefore, as a function of an increasing dielectric constant of the environment the exciton-trion complex “dissociates” to a biexciton rather than to an exciton and a trion.en
dc.description.versionPeer revieweden
dc.format.extent1-6
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationKylänpää, I & Komsa, H-P 2015, ' Binding energies of exciton complexes in transition metal dichalcogenide monolayers and effect of dielectric environment ', Physical Review B, vol. 92, no. 20, 205418, pp. 1-6 . https://doi.org/10.1103/PhysRevB.92.205418en
dc.identifier.doi10.1103/PhysRevB.92.205418en_US
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.otherPURE UUID: 08461f63-5f7d-4728-b25b-b912d3d28791en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/08461f63-5f7d-4728-b25b-b912d3d28791en_US
dc.identifier.otherPURE LINK: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.205418en_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/26798982/PhysRevB.92.205418.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/33041
dc.identifier.urnURN:NBN:fi:aalto-201808084441
dc.language.isoenen
dc.relation.ispartofseriesPHYSICAL REVIEW Ben
dc.relation.ispartofseriesVolume 92, issue 20en
dc.rightsopenAccessen
dc.subject.keywordbiexcitonen_US
dc.subject.keywordDFTen_US
dc.subject.keywordquantum Monte Carloen_US
dc.subject.keywordtransition metal dichalcogenideen_US
dc.titleBinding energies of exciton complexes in transition metal dichalcogenide monolayers and effect of dielectric environmenten
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
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