Structural, optical, and electrical properties of orthorhombic κ -(In x Ga 1-x ) 2 O 3 thin films

Material properties of orthorhombic κ-phase (In x Ga 1-x ) 2 O 3 thin films grown on a c-plane sapphire substrate by pulsed-laser deposition are reported for an indium content up to x ∼ 0.35. This extended range of miscibility enables band gap engineering between 4.3 and 4.9 eV. The c-lattice constant as well as the bandgap depends linearly on the In content. For x > 0.35, a phase change to the hexagonal InGaO 3 (ii) and the cubic bixbyite structure occurred.The dielectric function and the refractive index were determined by spectroscopic ellipsometry as a function of the alloy composition. We propose zirconium to induce n-type conductivity and have achieved electrically conducting thin films with a room temperature conductivity of up to 0.1 S/cm for samples with a low In content of about x = 0.01. Temperature-dependent Hall-effect measurements yielded a thermal activation energy of the free electron density of 190 meV. Schottky barrier diodes with rectification ratios up to 10 6 were investigated by quasi-static capacitance voltage and temperature-dependent current voltage measurements.

DOI

10.1063/1.5054394

Citation

Hassa , A , Von Wenckstern , H , Splith , D , Sturm , C , Kneiß , M , Prozheeva , V & Grundmann , M 2019 , ' Structural, optical, and electrical properties of orthorhombic κ -(In x Ga 1-x ) 2 O 3 thin films ' , APL Materials , vol. 7 , no. 2 , 022525 , pp. 1-9 . https://doi.org/10.1063/1.5054394

Permanent link to this item

https://urn.fi/URN:NBN:fi:aalto-201902251997

Collections

[article-cris] Perustieteiden korkeakoulu / SCI

Show all metadata

Structural, optical, and electrical properties of orthorhombic κ -(In x Ga 1-x ) 2 O 3 thin films

Access rights

Journal Title

Journal ISSN

Volume Title

Author

Date

Department

Major/Subject

Mcode

Degree programme

Language

Pages

Series

Abstract

Description

Keywords

Other note

DOI

Citation

Permanent link to this item

Collections