Structural, optical, and electrical properties of orthorhombic κ -(In x Ga 1-x ) 2 O 3 thin films

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Date

2019-02-01

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en

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1-9

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APL Materials, Volume 7, issue 2

Abstract

Material properties of orthorhombic κ-phase (In x Ga 1-x ) 2 O 3 thin films grown on a c-plane sapphire substrate by pulsed-laser deposition are reported for an indium content up to x ∼ 0.35. This extended range of miscibility enables band gap engineering between 4.3 and 4.9 eV. The c-lattice constant as well as the bandgap depends linearly on the In content. For x > 0.35, a phase change to the hexagonal InGaO 3 (ii) and the cubic bixbyite structure occurred. The dielectric function and the refractive index were determined by spectroscopic ellipsometry as a function of the alloy composition. We propose zirconium to induce n-type conductivity and have achieved electrically conducting thin films with a room temperature conductivity of up to 0.1 S/cm for samples with a low In content of about x = 0.01. Temperature-dependent Hall-effect measurements yielded a thermal activation energy of the free electron density of 190 meV. Schottky barrier diodes with rectification ratios up to 10 6 were investigated by quasi-static capacitance voltage and temperature-dependent current voltage measurements.

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Hassa, A, Von Wenckstern, H, Splith, D, Sturm, C, Kneiß, M, Prozheeva, V & Grundmann, M 2019, ' Structural, optical, and electrical properties of orthorhombic κ -(In x Ga 1-x ) 2 O 3 thin films ', APL Materials, vol. 7, no. 2, 022525, pp. 1-9 . https://doi.org/10.1063/1.5054394